Electron beam evaporation is employed to provide a vapour stream from materials commonly difficult to evaporate with standard thermal techniques. An energetic electron beam is targeted onto the source material which has the effect of increasing the temperature. There is no intrinsic limit to the temperature which can be attained using this method, in contrast to conventional radiative or indirect resistive heating processes.
Mini electron beam evaporators are employed to give maximum control of the evaporation rate at low fluxes and, importantly, to minimise contamination of the vapour stream for sensitive application areas such as surface science or thin-film doping. The construction of e-beam evaporators should therefore be aimed at maximising the evaporation control and minimising contamination.
The EV sources allow sub-monolayer per minute rate control enabling precise surface loading to be achieved.
The minimal heat-load from the sources coupled with the small spot profile from the source-leading to low angular spread at the sample face-makes this an excellent choice for achieving high-quality metal film structures.
The low thermal load from the QUAD-EV sources and the fine control of the deposition rate allows these sources to be used far closer to the sample face than conventional evaporators. This allows highly efficient use of expensive contact metallisation materials such as Au, Pd or Pt.
MBE Doping Applications
The fine control of deposition rate and rapid response make these evaporators an excellent choice as doping sources in MBE applications.
Multilayer Materials Deposition
Mantis QUAD-EV e-beam evaporators with its four channel power supply are commonly used to routinely deposit multilayer materials very conveniently.