QPREP Series

Chamber

The QPrep500 system is based on a UHV, conflat flange platform. This allows true UHV to be achieved while allowing excellent chamber access through the large top-flange.
All joints are internally welded and polished on request to reduce to an absolute minimum any outgassing. Base ports are confocal as standard allowing a wider variety of deposition sources to be employed than with non-confocal arrangements.
Two side-mounting ports for high-power e-beam sources can be specified while still leaving three confocal deposition ports in the base.
The system can be equipped with pumps ranging from 300 to 1500ls-1 turbo pumps but alternative pump types can be specified.

Applications

  • Semiconductor films
  • Dielectrics
  • Nanostructured films
  • Multilayers
  • Compound Semiconductors
  • Device Metallisation
  • Ultra-thin films

Sample

Sample Loading
The base system is equipped with a side-entry door appropriately sized for the sample platform chosen (1" to 6" as standard, 8" on request).
Optionally, a load-lock can be mounted for clean sample transfer while leaving the main chamber under vacuum. Sample transfer is actuated via a magnetically-coupled transfer arm. Sample hand-off is enabled via a z-shift lift-off on the sample table.

Sample Table
The sample table/manipulator can be configured as standard from 2" (52mm) to 6" (or multiple smaller) samples but can be modified for a number of custom configurations.

Options:

  • Variable speed (2-20rpm) sample rotation
  • DC or RF sample table bias
  • Sample heating up to 800°C
  • Sample cooling
  • Z-shift (0-100mm)

The sample cradle in heated sample holders is manufactured of refractory materials.

Components

Sputtering Sources

The base ports can accommodate up to four sputtering sources. We can supply 1-4" magnetron sputtering sources for DC or RF operation. More details about our sources are available here.
Alternatively we are happy to incorporate existing or third party guns into the system.

E-beam Sources
We offer two types of e-beam evaporation sources:

  1. Low dose, high accuracy
    These are intended for highly-controlled, ultra-thin film deposition of refractory materials into the system. See more details here.
  2. Multi kW sources
    These offer high deposition rate and high capacity. Up to two larger sources (single or multi-pocket) may be installed.

Nanoparticle Sources
Our NanoGen50 nanoparticle source can be installed on the chamber to allow controlled nanoparticle deposition onto the sample. Nanoparticles can be generated from any metal as well as from many compound materials (oxides, nitrides, carbides...) and alloys. The size of the particles is highly controlled - mean between ~0.5nm and 20nm with a narrow size distribution of ±15%. More details are available here.

Atomic Sources
For the growth of oxides or nitrides at low pressure, it is often necessary to use a more reactive form of oxygen (and certainly nitrogen) to form oxide or nitride compounds. Mantis Deposition manufactures RF plasma sources which are used to generate beams of higly reactive atomic oxygen or nitrogen. These can be incorporated to act alongside conventional metal deposition sources to grow high-quality compound layers. More info can be found here.

Thermal Sources
Thermal sources such as K-cells can be added. K-cells will fit through standard ports and optional, water-cooled cross-contamination shields can be added around them to improve overall system purity. More details are available here.

Auxiliaries

Gauges
The system is configured as standard with full-range gauges to allow seamless pumpdown monitoring.
Ports can be included for RHEED, ellipsometry, residual gas analysers or thin film monitors.
Optionally, additional analysis equipment can be included at the user's request.

Automation
The system can be automated using touchscreen-based pumpdown or using process automation feature in in-house developed software.