M Series


The M series system is based on a UHV, conflat flange platform with a large metal-sealed top flange. This allows true UHV to be achieved while granting excellent chamber access through the large top-flange. All joints are internally welded and polished on request to reduce to an absolute minimum any outgassing.

Base ports are confocal as standard allowing a wider variety of deposition sources to be employed than with non-confocal arrangements. Two side-mounting ports for high-power e-beam sources can be specified while still leaving up to seven confocal deposition ports in the base. Numerous ports are provided for gauges and analysis tools.

The system can be equipped with cryogenically-cooled panels to aid pumping and avoid thermal cross-talk between sources.

Internal bakeout heaters or full external bakeout tents can be incorporated, which allow the base pressure to attain a value of less than 1.0x10-10Torr with appropriate pumping.

The chamber can be equipped with pumps ranging from 300 to 2000ls-1 turbo pumps, cryo and ion pumps, but alternative pump types can be specified.

The system can be optionally equipped with removable cross-contamination shielding in applications where high rates of deposition are required.


  • Semiconductor films
  • Oxides/Nitrides
  • Nanostructured films
  • Multilayers
  • Compound Semiconductors
  • Glancing Angle Deposition
  • Ultra-thin films



Photo Credit
Jason Kawasaki, Assistant Professor, Materials Science and Engineering, University of Wisconsin-Madison, College of Engineering, transfers a sample into the molecular beam epitaxy system for film growth. Photo provided by: University of Wisconsin-Madison, College of Engineering External Relations.  Read more about this novel research


Sample Loading
The base system is equipped with side-entry door appropriately sized for the sample platform chosen (1" to 6" as standard, 8" on request).

Optionally a load-lock can be mounted for clean sample transfer while leaving the main chamber under vacuum. Sample transfer is actuated via a magnetically-coupled transfer arm. Sample hand-off is enabled via z-shift lift-off of the sample table. Sample transfer can optionally be automated from a sample storage cassette.

Sample Table
The sample table/manipulator can be configured as standard from 2" (52mm) to 6" (153mm) (or multiple smaller) samples but can be modified for a number of custom configurations.


  • Variable speed (2-20rpm) sample rotation
  • DC or RF sample table bias
  • Sample heating up to 800°C
  • Sample cooling
  • Z-shift (0-100mm)

All hot-zone components in a heated sample holder are manufactured of refractory materials in order to maintain system purity.


Sputtering Sources
The base ports can accommodate up to six sputtering sources. We can supply 1-4" magnetron sputtering sources for DC or RF operation. More details about our sources are available here.
Alternatively we are happy to incorporate existing or third party guns into the system.

E-beam Sources
We offer two types of e-beam evaporation sources:

  1. Low dose, high accuracy
    These are intended for highly-controlled, ultra-thin film deposition of refractory materials into the system. See more details here.
  2. Multi kW sources
    These offer high deposition rate and high capacity. Up to two larger sources (single or multi-pocket) may be installed.

Nanoparticle Sources
Our NanoGen50 nanoparticle source can be installed on the chamber to allow controlled nanoparticle deposition onto the sample. Nanoparticles can be generated from any metal as well as from many compound materials (oxides, nitrides, carbides...) and alloys. The size of the particles is highly controlled - mean between ~0.5nm and 20nm with a narrow size distribution of ±15%. More details are available here.

Atomic Sources
For the growth of oxides or nitrides at low pressure, it is often necessary to use a more reactive form of oxygen (and certainly nitrogen) to form oxide or nitride compounds. Mantis Deposition manufactures RF plasma sources which are used to generate beams of higly reactive atomic oxygen or nitrogen. These can be incorporated to act alongside conventional metal deposition sources to grow high-quality compound layers. More info can be found here.

Thermal Sources
Thermal sources such as K-cells can be added. K-cells will fit through standard ports and optional, water-cooled cross-contamination shields can be added around them to improve overall system purity. More details are available here.


The system is configured as standard with full-range gauges to allow seamless pumpdown monitoring.
Ports can be included for RHEED, ellipsometry, residual gas analysers or thin film monitors.
As an option additional analysis equipment can be included at the user's request.

The system can be automated using touchscreen-based pumpdown or using process automation feature in in-house developed software.