The M series system is based on a UHV, conflat flange platform with a large metal-sealed top flange. This allows true UHV to be achieved while granting excellent chamber access through the large top-flange. All joints are internally welded and polished on request to reduce to an absolute minimum any outgassing.
Base ports are confocal as standard allowing a wider variety of deposition sources to be employed than with non-confocal arrangements. Two side-mounting ports for high-power e-beam sources can be specified while still leaving up to seven confocal deposition ports in the base. Numerous ports are provided for gauges and analysis tools.
The system can be equipped with cryogenically-cooled panels to aid pumping and avoid thermal cross-talk between sources.
Internal bakeout heaters or full external bakeout tents can be incorporated, which allow the base pressure to attain a value of less than 1.0x10-10Torr with appropriate pumping.
The chamber can be equipped with pumps ranging from 300 to 2000ls-1 turbo pumps, cryo and ion pumps, but alternative pump types can be specified.
Shielding: The system can be optionally equipped with removable cross-contamination shielding in applications where high rates of deposition are required.
- Semiconductor films
- Nanostructured films
- Compound Semiconductors
- Glancing Angle Deposition
- Ultra-thin films
Photo credit: Jason Kawasaki, Assistant Professor, Materials Science and Engineering, University of Wisconsin-Madison, College of Engineering, transfers a sample into the molecular beam epitaxy system for film growth. Photo provided by: University of Wisconsin-Madison, College of Engineering External Relations. Read more about this novel research